A new technical paper titled “Simulation of Vertically Stacked 2-D Nanosheet FETs” was published by researchers at Università di Pisa and TU Wien. “We present a simulation study of vertically stacked ...
Skin-like displays are critical components of information output in next-generation portable and wearable electronics. Currently, all such displays are fabricated on glass or thick plastic substrates, ...
(Nanowerk News) At this week’s IEEE IEDM conference, world-leading research and innovation hub for nano-electronics and digital technology, imec, reported for the first time the CMOS integration of ...
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).
Figure 1: Schematic illustration of the vertically stacked graphene–MoS 2 –metal FETs. Figure 2: Fabrication and structural characterization of the vertical transistor. Figure 3: Room-temperature ...
Nanoelectronics research center imec has reported for the first time the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a ...
A project at MIT has developed a possible new route to sharper defect-free displays, by stacking the light emitting diodes into vertical multicolored pixels. Although the size of conventional LED ...
Figure 1: Growth of in-plane and vertically stacked graphene and boron nitride heterostructures. Figure 2: Spectroscopic characteristics of h-BN-G and G/h-BN. Figure 3: Differences in surface ...
Stacking an object on top of another object is a straightforward task for most people. But even the most complex robots struggle to handle more than one such task at a time. Stacking requires a range ...
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