JST announces the successful development of a high-quality bulk GaN growth device based on the THVPE method, a development topic of the Newly extended Technology transfer Program (NexTEP). Development ...
Osaka - Gallium nitride (GaN) is a semiconductor material whose wide band gap may one day lead to it superseding silicon in electronics applications. It is therefore important to have GaN ...
GaN based HEMTs (high electron mobility transistors) offer efficiency, density and cost advantages compared with silicon based devices. These features should result in widespread adoption of GaN ...
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