Before circuit design can begin on any advanced semiconductor manufacturing process, the electrical behavior of the devices — transistors, diodes, resistors — must be described accurately in so-called ...
Ikoma, Japan – Scientists from Nara Institute of Science and Technology (NAIST) used the mathematical method called automatic differentiation to find the optimal fit of experimental data up to four ...
A SPICE model based on the BSIM3 core eliminates shortcomings in the existing level 1 and level 3 subcircuit models, enabling better simulation of trench-type power MOSFETs. An improved SPICE model ...
Philips has developed an advanced Mosfet compact model intended to provide a more accurate description of device behaviours for the 90nm, 65nm and 45nm process generations. Compact models are used as ...
High-voltage MOSFETs are indispensable components in power electronics, where they are required to manage substantial voltages with high efficiency and reliability ...
Increasingly, applications such as DC/DC converters, power management units (PMU)[1], LED display power[2] and integrated display lighting solutions rely on integrated power MOSFETs (e.g., LDNMOS).
Penn State and Philips researchers have merged the best features of their respective approaches to produce a new mathematical model that describes the behavior of the MOS transistor in a wide class of ...
LONDON — Scientists from Philips Research (Eindhoven, The Netherlands) and The Pennsylvania State University have developed a model of metal-oxide semiconductor field effect transistor (MOSFET) ...
Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...
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