“Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with ...
AI is driving demand and higher prices for DRAM and NAND into 2026. Products using non-volatile memories to replace NOR and ...
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Next-generation memory: Tungsten-based SOT-MRAM achieves nanosecond switching and low-power data storage
The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known ...
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Sustainable SOT-MRAM memory technology could replace cache memory in computer architecture in the future
How much energy is consumed each time we upload an image to social media, which relies on data centers and cloud storage? Data centers currently account for about 1% of global energy consumption, ...
Magnetic random-access memory, or MRAM, uses magnetic rather than electrical charges to store data bits. While this prototype memory has so far existed only in the laboratories of IBM Corp., the ...
Spin-orbit transfer magnetic random-access memory (SOT-MRAM) is becoming more visible in next-generation memory offerings for its faster write speeds and much longer endurance. Two recent ...
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